All Publications

S. T. Le, A. F. Rigosi, J. A. Hagmann, C. Gutierrez, J. U. Lee, C. A. Richter, “Geometric interference in a high-mobility

graphene annulus p-n junction device,” Phys. Rev. B 105, 085435 (2022)

L. R. St. Marie, C.-I. Liu, I.-F. Hu, H. M. Hill, D. Saha, R. E. Elmquist, C.-T. Liang, D. B. Newell, P. Barbara, J. A. Hagmann, A. F. Rigosi, "Abrikosov vortex corrections to effective magnetic field enhancement in epitaxial graphene," Phys. Rev. B 104, 085435 (2021)

J. A. Hagmann, X. Wang, R. V. Kashid, P. Namboodiri, J. Wyrick, S. W. Schmucker, M.D. Stewart Jr., R. M. Silver, C. A. Richter, "Electron-electron interactions in highly degenerately doped embedded Si:P delta layers in silicon produced by variable PH3 dosing," Phys. Rev. B 101, 245419 (2020)

J. A. Hagmann, C. Waduwarage Perera, S. Cular, “Reducing Multijunction Thermal Converter Output Resistance to Reduce Measurement Noise,” 2020 Conference on Precision Electromagnetic Measurements (CPEM), 1-2 (2020)

Y. Amagai, S. Cular, J. A. Hagmann, T. E. Lipe and N. -H. Kaneko, “Fabrication of High-Current Multijunction Thermal Current Converters on Silicon Substrates by Wet Chemical Etching,” 2020 Conference on Precision Electromagnetic Measurements (CPEM), 1-2 (2020)

J. A. Hagmann, “Topological Insulator,” Chalcogenide semiconductors: from 3D to 2D and beyond, Ed. X. Liu, S. Lee, J. K. Furdyna, T. Luo, and Y.-H. Zhang, Cambridge, Elsevier Science & Technology Books, pp. 305-337 (2020)

A. N. Ramanayaka, K. Tang, J. A. Hagmann, H.-S. Kim, D. S. Simons, C. A. Richter, J. M. Pomeroy, “Use of quantum effects as potential qualifying metrics for quantum grade silicon,” AIP Advances 9, 125153 (2019)

J. Wyrick, X. Wang, R. V. Kashid, P. Namboodiri, S. W. Schmucker, J. A. Hagmann, K. Liu, M. D. Stewart Jr., C. A. Richter, G. W. Bryant, R. M. Silver, “Atom‐by‐Atom Fabrication of Single and Few Dopant Quantum Devices,” Adv. Funct. Mater., 1903475 (2019)

J. A. Hagmann, X. Wang, P. Namboodiri, J. Wyrick, R. Murray, M. D. Stewart Jr., R. M. Silver, C. A. Richter, “High resolution thickness measurements of ultrathin Si:P monolayers using weak localization,” Appl. Phys. Lett. 112, 043102 (2018)

X. Wang, J. A. Hagmann, P. Namboodiri, J. Wyrick, K. Li, R. Murray, F. Meisenkothen, A. F. Myers, M. D. Stewart Jr., C. A. Richter, R. M. Silver, “Quantifying Atomic-scale Dopant Movement and Electrical Activation in Si:P Monolayers,” Nanoscale 10, 4488 (2018)

A. N. Ramanayaka, H.-S. Kim, J. A. Hagmann, R. E. Murray, K. Tang, F. Meisenkothen, H. Zhang, L. A. Bendersky, A. V. Davydov, N. M. Zimmerman, C. A. Richter, J. M. Pomeroy, “Towards superconductivity in p-type delta-doped Si/Al/Si heterostructures,” AIP Advances 8, 075329 (2018)

A. J. Biacchi, S. T. Le, B. G. Alberding, J. A. Hagmann, S. J. Pookpanratana, E. J. Heilweil, C. A. Richter, A. R. Hight Walker, “Contact and Non-Contact Measurement of Electronic Transport in Individual 2D SnS Colloidal Semiconductor Nanocrystals,” ACS Nano 12, 10045 (2018)

J. A. Hagmann, X. Li, S. Chowdhury, S.-N. Dong, S. Rouvimov, S. J. Pookpanratana, K. M. Yu, T. A. Orlova, T. B. Bolin, C. U. Segre, C. A. Richter, D. G. Seiler, X. Liu, J. K. Furdyna, M. Dobrowolska, “Molecular beam epitaxy growth and structure of self-assembled Bi2Se3/Bi2MnSe4 multilayer heterostructures,” New J. Phys. 19, 085002 (2017)

J. A. Hagmann, S. T. Le, L. F. Schneemeyer, J. A. Stroscio, T. Besara, T. Siegrist, C. A. Richter, D. G. Seiler, “Interacting nanoscale magnetic superatom cluster arrays in molybdenum oxide bronzes,” Nanoscale 9, 7922 (2017)

J. A. Hagmann, S. T. Le, C. A. Richter, D. G. Seiler, “Advanced Experimental Methods for Low-Temperature Magnetotransport Measurement of Novel Materials,” J. Visualized Experiments 107, 53506 (2016)

J. A. Hagmann, K. Traudt, Y. Y. Zhou, X. Liu, M. Dobrowolska, J. K. Furdyna, “Magnetization obtained from ferromagnetic resonance investigation of Ga1−xMnxAs,” J. Magnetism and Magnetic Materials 360, 137 (2014)

C. P. Weber, E. A. Kittlaus, K. B. Mattia, C. J. Waight, J. Hagmann, X. Liu, M. Dobrowolska, and J. K. Furdyna, “Rapid diffusion of electrons in GaMnAs,” Appl. Phys. Lett. 102, 182402 (2013)

J. A. Hagmann, X. Liu, M. Dobrowolska, J. K. Furdyna “Evidence of superconductor proximity effect in Bi2Te3 thin films when indium contacts are used in magnetotransport studies,” J. Applied Physics 113, 17C724 (2013)

X. Liu, D. J. Smith, J. Fan, Y.-H. Zhang, H. Cao, Y. P. Chen, B. J. Kirby, N. Sun, S. T. Ruggiero, J. Leiner, R. E. Pimpinella, J. Hagmann, K. Tivakornsasithorn, M. Dobrowolska, and J. K. Furdyna, “Topological insulators Bi2Te3 and Bi2Se3 grown by MBE on (001) GaAs substrates,” AIP Conf. Proc. 1416, 105 (2011)